Thermodynamic Disorder in GaN-based Nanowires

Compound Semiconductor and Nanowerk features "KAUST Team Reveals Thermodynamic Disorder In GaN-Based Nanowires"

4/25/2017
"New study shows the thermodynamic entropy behaviour of InGaN/GaN nanowires."

"GaN-based p-i-n power devices based on nanowires are suitable for attenuators, high-frequency switches, as well as photodetector applications. However, non-radiative recombination affects their performance."

"Led by Xiaohang Li, Iman S. Roqan, and Boon S. Ooi, the team studied the photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires using temperature-dependent photoluminescence."

"They hypothesised that the amount of generated randomness in the InGaN layers in the nanowires eventually increases as the temperature approaches room temperature."

Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires
Nasir Alfaraj, Somak Mitra, Feng Wu, Idris A. Ajia, Bilal Janjua, Aditya Prabaswara, Renad A. Aljefri, Haiding Sun, Tien Khee Ng, Boon S. Ooi, Iman S. Roqan, and Xiaohang Li
Applied Physics Letters, 110(16), 161110 (2017)

DOI: 10.1063/1.4981252

HDL: 10754/623269