"New study shows the thermodynamic entropy behaviour of InGaN/GaN nanowires."
"GaN-based p-i-n power devices based on nanowires are suitable for attenuators, high-frequency switches, as well as photodetector applications. However, non-radiative recombination affects their performance."
"Led by Xiaohang Li, Iman S. Roqan, and Boon S. Ooi, the team studied the photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires using temperature-dependent photoluminescence."
"They hypothesised that the amount of generated randomness in the InGaN layers in the nanowires eventually increases as the temperature approaches room temperature."
Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowiresNasir Alfaraj, Somak Mitra, Feng Wu, Idris A. Ajia, Bilal Janjua, Aditya Prabaswara, Renad A. Aljefri, Haiding Sun, Tien Khee Ng, Boon S. Ooi, Iman S. Roqan, and Xiaohang LiApplied Physics Letters, 110(16), 161110 (2017)DOI: 10.1063/1.4981252
HDL: 10754/623269