Dr. Tien Khee Ng (KAUST Photonics Laboratory) and Prof. Jianchang Yan (Chinese Academy of Sciences) collaborated in guest-editing a Journal of Nanophotonics (JNP) Special Section on Semiconductor UV Photonics.
The issue comprises 12 accepted articles inclusive of 3 review articles.
SPIE Journal of Nanophotonics Special Section on Semiconductor UV Photonics:
Review articles:
1. Enhancing the light extraction of AlGaN-based ultraviolet light-emitting diodes in the nanoscale
Yanan Guo, Jianchang Yan, Yun Zhang, Junxi Wang, Jinmin Li
2. Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices
Mohd Sharizal Alias, Malleswararao Tangi, Jorge A. Holguín-Lerma, Edgars Stegenburgs, Abdullah A. Alatawi, Islam Ashry, Ram Chandra Subedi, Davide Priante, Mohammad Khaled Shakfa, Tien Khee Ng, Boon S. Ooi
3. Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices
Jung-Wook Min, Davide Priante, Malleswararao Tangi, Guangyu Liu, Chun Hong Kang, Aditya Prabaswara, Chao Zhao, Latifah Al-Maghrabi, Yazeed Alaskar, Abdulrahman Albadri, Ahmed Alyamani, Tien Khee Ng, Boon Ooi
Contributed articles:
4. UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate
Yiyun Zhang, Hongjian Li, Lining Liu, Panpan Li, Liancheng Wang, Xiaoyan Yi, Guohong Wang
5. Structural design and optimization of deep-ultraviolet light-emitting diodes with AlxGa1−xN/AlyGa1−yN/AlxGa1−xN(x < y) p-electron blocking layer
Chunshuang Chu, Kangkai Tian, Mengqian Fang, Yonghui Zhang, Songhan Zhao, Wengang Bi, Zi-Hui Zhang
6. Loss analysis in nitride deep ultraviolet planar cavity
Zhongming Zheng, Yingqian Li, Onkundi Paul, Hao Long, Samuel Matta, Mathieu Leroux, Julien Brault, Leiying Ying, Zhiwei Zheng, Baoping Zhang
7. Design and fabrication of InGaN/GaN superlattice-based solar cell using photonic crystal structure
Nikhil Deep Gupta, Vijay Janyani, Manish Mathew, Monika Kumari, Rajendra Singh
8. Magnetic field influence on the intensity of ZnO random lasing and exciton luminescence
Charus Briskina, Andrey Tarasov, Valery Markushev, Mikhail Shiryaev
9. Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si
Zengcheng Li, Legong Liu, Yingnan Huang, Meixin Feng, Jianxun Liu, Qian Sun, Xiujian Sun, Xiaoning Zhan, Hongwei Gao, Yu Zhou, Huaibing Wang, Hanmin Zhao, Hui Yang
10. Improved crystalline quality of Al-rich n-AlGaN by regrowth on nanoporous template fabricated by electrochemical etching
Liang Zhang, Jianchang Yan, Qingqing Wu, Yanan Guo, Chao Yang, Tongbo Wei, Zhiqiang Liu, Guodong Yuan, Xuecheng Wei, Lixia Zhao, Yun Zhang, Jinmin Li, Junxi Wang
11. Heterointerface point defects in GaN/AlN quantum wells
Yahor V. Lebiadok, Alena A. Razumets, Tatyana V. Bezyazychnaya, Ivan A. Aleksandrov, Konstantin S. Zhuravlev
12. Design of aluminum nitride metalens in the ultraviolet spectrum
Linhao Guo, Siyuan Xu, Rongqiao Wan, Tao Li, Lingxing Xiong, Liancheng Wang, Wenhui Zhu