Nanowire UV-LEDs On Silicon

Compound Semiconductor features "Researchers Simplify Fabrication Of Nanowire UV-LEDs On Silicon"

3/6/2017
"KAUST team demonstrates dislocation-free AlGaN nanowires that spontaneously coalesce to allow device fabrication without planarisation."

"There is a growing demand for mercury-free, environmentally friendly, compact UV LEDs for disinfection applications. Existing AlGaN-based planar UVLEDs, however, suffer from high dislocation densities, low light extraction efficiency and poor p-doping efficiency."

"Dislocation-free AlGaN nanowires have shown better p-doping and light extraction efficiency but the growth of self-assembled, vertically oriented and uniform nanowires has remained a challenge. Furthermore, the nanowire-based LEDs require a planarisation process to first fill the gap between nanowires and then to make ohmic contacts. Planarisation is expensive and significantly reduces the light extraction efficiency due to the extreme absorption of the filling materials in the UV wavelengths."

"Their pendeo-epitaxy technique offers the possibility of simplifying the fabrication of a wide range of UV-nanowire devices such as lasers, photodetectors, modulators, and silicon integrated photonics."


Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy
Bilal Janjua, Haiding Sun, Chao Zhao, Dalaver H. Anjum, Feng Wu, Abdullah Alhamoud, Xiaohang Li, Abdulrahman M. Albadri, Ahmed Y. Alyamani, Munir M. El-Desouki, Tien Khee Ng, and Boon S. Ooi
Nanoscale, Accepted Manuscript (2017)

DOI: 10.1039/C7NR00006E

HDL: 10754/622985