Quantum Well Intermixing in III-nitrides

Quantum Well Intermixing in III-nitrides


We report on a unique area-selective, post-growth approach in engineering the quantum-confined potential-energy profile of InGaN/GaN quantum wells (QWs) utilizing metal/dielectric-coating induced intermixing process. This led to simultaneous realization of adjacent regions with peak emission of 2.74 eV and 2.82 eV with a high spatial resolution (~ 1 μm) at the coating boundary.

Enable the shifting of transition energy as large as 75 meV, indicating the capability of post-growth intermixing in III-nitrides, using a low-temperature, time-saving and low-cost process.
Present a novel approach to alleviate EQE droop (from 30.5 % to 16.6 %) by softening the potential profile of InGaN/GaN QWs.


Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing
Chao Shen, Tien Khee Ng, and Boon S. Ooi
Optics Express, 23(6), 7991-7998 (2015)

DOI: 10.1364/OE.23.007991

HDL: 10754/558584