Research

Photonics Laboratory at King Abdullah University of Science and Technology is investigating semiconductor lasers and photonic integrated circuits for wide applications optical communications, solid-state lighting and sensors. KAUST and Photonics Lab are well equipped with necessary facilities for semiconductor material growth such as molecular beam epitaxy (MBE), nano-fabrication, and photonic and optoelectronic materials and device characterizations.







Current Research

Underwater Wireless Optical Communication (UWOC) has developed in many aspects over the past few years, with significant contribution from the Photonics Lab at KAUST.​​​​
1.1 GHz of modulation bandwidth in LD based VLC without a limitation from the slow 3.8 MHz phosphor response. A high data transmission rate of 2 Gbit/s was achieved without an optical blue filter using OOK modulation scheme. ​
Amplified spontaneous emission from SLD shows balanced emission power and peak FWHM (> 6 nm at 100 mW). Pumping a YAG:Ce phosphor, the SLD served as a white light engine. ​​
By seamlessly combining waveguide-modulator and laser diode emitting on semipolar-plane substrate, a small-footprint, high-speed, low power-consumption device having the SSL-VLC dual-functionalities was investigated. Our approach enables the platform for high data-rate SSL-VLC dual-function lamps for eventual realization of smart-lighting and internet-of-things.
The first experimental report of quantum well intermixing in InGaN/GaN quantum wells. Soft potential profile InGaN/GaN QWs by metal/dielectric induced intermixing. Unique area-selective, post-growth approach in engineering the quantum-confined potential-energy profile of InGaN/GaN quantum wells (QWs) utilizing metal/dielectric-coating induced intermixing process.
For the first time, the chemical exfoliation of completely TD-free, single-crystalline, ultrathin (tens of nanometers) GaN nanomembranes is demonstrated using UV-assisted electroless chemical etching. These Nano membranes can act as seeding layers for subsequent overgrowth of high-quality GaN.
I​nvestigation in quantum dot/dash nano-structures to enable the next generation of semiconductor broadband light emitting devices.
Research on a variety of gallium nitride based nanostructures for light generation in the broadband spectrum. ​