It was our honor to have the special speaker Prof. Elhadj Dogheche from Institute of Electronic Microelectronic and Nanotechnology IEMN CNRS, University of Valenciennes France to give us a presentation on New Generation on Gallium Nitride based High Speed Photonic Devices in the 216th Journal Club Meeting.
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It was our honor to have the special speaker Prof. Elhadj Dogheche from Institute of Electronic Microelectronic & Nanotechnology IEMN CNRS, University of Valenciennes France to give us a presentation on New Generation on Gallium Nitride based High Speed Photonic Devices in the 216th Journal Club Meeting.
III-nitrides materials are very promising ternary alloy system that receives a lot of attentions thanks to theirs tunable bandgap that varies from near infrared to near ultraviolet regions. Until now, InGaN/GaN materials have been widely used in various applications like high efficiency solar cells, high-brightness blue to green LED as well as non-phosphor based direct white light generation. Their unique set of properties (optical index, electrooptic & piezoelectric effects) makes them suitable candidates for a number of potential optoelectronic applications as well for modulation, high speed switching, optical interconnection required for future full optical fiber links. In order to design efficient GaN-based active devices, it is a prerequisite to fully characterize the optical properties of III-nitrides materials. In this research, we report the optical indices and the losses of InxGa1-xN films grown by MOCVD. We report experimental results on a field effect refractive index change into gallium nitride structures using surface Plasmon. In order to understand the origin of the index modulation, we conducted a TEM analysis and discussed the influence of threading dislocations density. We discuss the design and the fabrication process of InGaN-based ultrafast devices.
