Semiconductor Today’s editorial features "Quantum well/barrier intermixing blue-shift of InGaP"
KAUST has developed a quantum well intermixing technique to blue-shift indium gallium phosphide (InGaP) quantum well bandgaps to give 628nm red, 602nm orange and 585nm yellow electroluminescence.
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"King Abdullah University of Science & Technology (KAUST) in Saudi Arabia has developed a quantum well intermixing (QWI) technique to blue-shift indium gallium phosphide (InGaP) quantum well bandgaps to give 628nm red, 602nm orange and 585nm yellow electroluminescence [A. A. Al-Jabr et al, J. Appl. Phys., vol119, p135703, 2016]. The researchers see potential application in solid-state lighting, photodynamic therapy (PDT), medicine, and visible light communication."
"The team reports: "A maximum blue-shift of 75nm (250meV) is achieved, which is the highest ever reported in this material system." The aim is to bridge the gap for high-efficiency light-emitting devices in the green-yellow-orange part of the visible spectrum between III-nitride (blue-violet) and III-phosphide (red) semiconductors."
Read more in Semiconductor Today
Original article - DOI: 10.1063/1.4945104
