About Paulraj Gnanasekar Paulraj Gnanasekar Postdoctoral Research Fellow (former), Photonics Laboratory photoelectrochemistry 2D materials My research is focused on the synthesis of 2D materials by CVD approach and renewable hydrogen production during Ph.D. My current research is focused on electrochemical and photoelectrochemical N2 reduction, CO2 Reduction and oxidation applications using 2D heterostructures. Research Interests CO 2/N 2 Reduction Reaction Oxidation Reaction 2D Materials Chemical Vapour Deposition Renewable Energy Photoelectrochemisty Selected Publications G. Paulraj, P. Dharmaraj, V. Purushothaman, Jr-hau He and K. Jeganathan, Highly efficient and stable photoelectrochemical hydrogen evolution with 2D-NbS2/Si Articles Related News March 2021 Huafan Zhang's tutorial article was selected as an Editor's Pick 1 min read · Fri, Mar 26 2021 News Huafan Zhang, a Ph.D. student at KAUST Photonics Laboratory recently published her comprehensive tutorial article in AIP's Journal of Applied Physics. The article titled "InGaN-based nanowires development for energy harvesting and conversion applications" was selected as the Editor's Pick. The tutorial "teaches the essential development of nitrogen-plasma-assisted molecular-beam-epitaxy grown InGaN nanowires as an application-inspired platform for energy harvesting and conversion applications by growing dislocation- and strain-relieved axial InGaN-based nanowires." The article is featured
Huafan Zhang's tutorial article was selected as an Editor's Pick 1 min read · Fri, Mar 26 2021 News Huafan Zhang, a Ph.D. student at KAUST Photonics Laboratory recently published her comprehensive tutorial article in AIP's Journal of Applied Physics. The article titled "InGaN-based nanowires development for energy harvesting and conversion applications" was selected as the Editor's Pick. The tutorial "teaches the essential development of nitrogen-plasma-assisted molecular-beam-epitaxy grown InGaN nanowires as an application-inspired platform for energy harvesting and conversion applications by growing dislocation- and strain-relieved axial InGaN-based nanowires." The article is featured
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