ultraviolet wavelengths

Deep-Ultraviolet Optoelectronic Devices Enabled by the Hybrid Integration of Next-Generation Semiconductors and Emerging Device Platforms

Nasir Alfaraj, Ibn Rushd Postdoctoral Fellow, The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto

Nov 11, 18:00 - 20:00

B3 L5 R5209

photonics ultraviolet wavelengths optoelectronics

In this dissertation, the design and fabrication of deep-ultraviolet photodetectors, based on gallium oxide and its alloys, through the heterogeneous integration with metallic and other inorganic materials is investigated. The crystallographic properties of grown oxide films formed directly and indirectly on silicon, magnesium oxide, and sapphire are examined, and the challenges that hinder the realization of efficient and reliable deep-ultraviolet photodetectors are elaborated on. I provide an overview of aluminum nitride, gallium oxide, sapphire, and silicon substrates as platforms for deep-ultraviolet optoelectronic devices, in which I elaborate on the challenges associated with using sapphire as a platform for efficient deep-ultraviolet devices and detail advancements in device growth and fabrication on silicon and magnesium oxide substrates.