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Group Photos 2014 - 2017 KAUST - IEEE Photonics Society Malaysia Chapter Seminar April 3, 2017 Delegates from IEEE Photonics Society Malaysia Chapter visited KAUST and Photonics Laboratory. Speakers include - Boon S. Ooi ( KAUST), Md. Roslan ( USM), Mohd Adzir ( UPM), Chao Zhao ( KAUST), Zulfadzli Yusoff ( MMU), Mohd Sharizal ( KAUST), Sumiaty Ambran ( UTM), Mohamed Ebaid ( KAUST), Ahmad Ashrif ( UKM), Fairuz Abdullah ( UNITEN), Tien Khee Ng ( KAUST), Mohd Rashidi ( UNIMAP), Siti Barirah ( UPM). Visit by CAS Institute of Semiconductors Faculty October 19, 2016 Delegates from the Institute of

Research

About

The Photonics Laboratory aims at delivering compact and energy saving integrated laser-diode based devices and solutions for applications requiring light spanning the ultraviolet to the visible and near-infrared regime. A plethora of practical laser-based solutions are conceived, and proof-of-concept models built for data collection and testing of a new class of innovative multi-function laser devices. The research into laser device physics and group III-V nanostructures for future applications further enables practical solutions to be applied to the current issues related to energy, water

Photonics Laboratory

Overview The Photonics Laboratory aims at delivering compact and energy saving integrated laser-diode based devices and solutions for applications requiring light spanning the ultraviolet to the visible and near-infrared regime. A plethora of practical laser-based solutions are conceived, and proof-of-concept models built for data collection and testing of a new class of innovative multi-function optoelectronic devices and optical fiber systems. The research into laser device physics and group III-V nanostructures for future applications further enable practical solutions to be applied to the

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Contact Us

Boon Ooi Professor, Electrical and Computer Engineering Principal Investigator, Photonics Laboratory Photonics Laboratory King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900, Kingdom of Saudi Arabia Building 3, Office 3218 Lab L​andline: +966 (0)12 808-4386 PI Office: +966 (0)12 808-4350 Email: boon.ooi@kaust.edu.sa Applying to KAUST Please visit the admissions section on our main KAUST Website, if you wish to apply to for the M.S. or Ph.D. Degree in Electrical and Computer Engineering. Questions About the Application Process If you have questions about your

Links

KAUST Links King Abdullah University of Science and Technology Computer, Electrical and Mathematical Sciences and Engineering Division Electrical Engineering Program Core Labs & Major Facilities Global Collaborative Research Library Selected Journals IEEE - Explore Institute of Electrical and Electronics Engineering Digital Library ISI - Thomson Reuters Science Citation Index Search APS - American Physical Society Journal Search Scirus - Comprehensive Science Specific Search Engine OSA - The Optical Society, Optics Info Base Science - Science Online Journal Science Direct - SciVerse Scientific

Resources

Publications

Photonics Journal Articles (2009-Present)

Year 2024 7. Protecting and Enhancing the Photoelectrocatalytic Performance of InGaN Nanowires toward Nitrogen Reduction to Ammonia Synthesis Paulraj Gnanasekar, Karthik Peramaiah, Huafan Zhang, Mathan Kumar Eswaran, Rakesh Rosan Pradhan, Udo Schwingenschlögl, Tien Khee Ng, Qiaoqiang Gan, Jeganathan Kulandaivel, Kuo-Wei Huang, and Boon S. Ooi ACS Applied Energy Materials 2023 6 (21), 10784-10793 DOI: 10.1021/acsaem.3c01277 6. Leveraging Intermolecular Charge Transfer for High-Speed Optical Wireless Communication Xin Zhu, Yue Wang, Issatay Nadinov, Simil Thomas, Luis Gutiérrez-Arzaluz, Tengyue

Teaching

Teaching

EE 208. Semiconductor Optoelectronic Devices (3-0-3) Materials for optoelectronics, optical processes in semiconductors, absorption and radiation, transition rates and carrier lifetime. Principles of LEDs, lasers, photodetectors, modulators and solar cells. Optoelectronic integrated circuits. Designs, demonstrations and projects related to optoelectronic device phenomena. EE 308. Semiconductor Lasers and LEDs (3-0-3) Prerequisite: EE 208 Optical processes in semiconductors, spontaneous emission, absorption gain, stimulated emission. Principles of light-emitting diodes, including transient

Front Page

Photonics Laboratory Research Group

Professor Boon Ooi leads the so-called Photonics research group, which stands for Photonics Laboratory The Photonics Laboratory aims at delivering compact and energy saving integrated laser-diode based devices and solutions for applications requiring light spanning the ultraviolet to the visible and near-infrared regime. A plethora of practical laser-based solutions are conceived, and proof-of-concept models built for data collection and testing of a new class of innovative multi-function laser devices.

Other

Conferences and Proceedings (2009-Present)

Year 2023 5. Chaotic-cavity surface-emitting lasers for optical wireless communication and low-speckle illumination Omar Alkhazragi, Ming Dong, Liang Chen, Dong Liang, Tien Khee Ng, Junping Zhang, Hakan Bagci, and Boon S Ooi in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optical Society of America, 2023), paper STh4Q.4 San Jose, California, United States, 7–12 May 2023. DOI: 10.1364/CLEO_SI.2023.STh4Q.4 4. Hybrid distributed acoustic sensing and Kramers–Kronig communication system over a two-mode fiber Juan M. Marin, Dmitrii Briantcev, Chun Hong Kang, Omar Alkhazragi, Tien

Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes

Despite the recent progress in gallium nitride (GaN) growth technology, the excessively high threading dislocation (TD) density within the GaN crystal, caused by the reliance on heterogeneous substrates, impedes the development of high-efficiency, low-cost, GaN-based heterostructure devices. For the first time, the chemical exfoliation of completely TD-free, single-crystalline, ultrathin (tens of nanometers) GaN nanomembranes is demonstrated using UV-assisted electroless chemical etching. These Nano membranes can act as seeding layers for subsequent overgrowth of high-quality GaN. A model is

InGaN-based Superluminescent Diodes (SLDs)

​Marry LED and LD virtues Speckle-free + droop free + broad spectrum A good light source for SSL+VLC Blue SLD developed at KAUST Photonics with integrated absorber design ​ SLD shows > 800 MHz modulation bandwidth with optical power of > 10 mW, enabling a data rate of 1.3 Gbps using OOK modulation scheme. Public ations High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications Chao Shen, Tien Khee Ng, John T. Leonard, Arash Pourhashemi, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Ahmed Y. Alyamani, Munir

KFUPM-KAUST 4th Workshop on Solid-state Lighting 2015

In 2015, faculties and research workers (staff and students) from KFUPM and KAUST rekindle the spirit of scientific exchange and collaboration at the KFUPM campus. The topic of discussion centered around solid-state lighting and related topics. Thanks to Prof. Sunaidi and KFUPM management for the staunch support and hospitality rendered to the participants. Dr. Rojas and Dr. Khan, postdocs at KAUST, who are joining KFUPM soon also presented in the workshop.

LED Characterization Station

Electroluminescence (EL) by definition is the illumination from the material under the passage of an external voltage bias (electrical field) or injection current. This phenomenon is ​the result of radiative recombination in a material. In the direct bandgap semiconductor, the excess electrons and holes flow into the semiconductor, recombine and release their energy as photons without changing the crystal momentum. I-V, L-I and EL setup: Keithley 2400 source meter, Newport 2936C power meter and Ocean Optics QE65000 spectrometer.